کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7924209 1511968 2015 12 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Role of film thickness on the microstructure and electrical properties of Mn-Co-Ni-O thin film thermistors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Role of film thickness on the microstructure and electrical properties of Mn-Co-Ni-O thin film thermistors
چکیده انگلیسی
Mn1.85Co0.3Ni0.85O4 (MCN) thin film thermistors with different film thickness (in the range of 400-750 nm) were prepared on Al2O3 substrates by sol-gel technique. The effects of film thickness on the microstructure and electrical properties of the prepared thin film thermistors were investigated by XRD, FESEM, resistance-temperature measurements and Hall measurements. The results showed that MCN thin film thermistors were of good crystallization and compact surface, and the carrier concentration was independent on the thickness. The resistance measured at room temperature was almost linearly decreasing with the increase of thickness. The sensitivity and activation energy increased slightly, then, the aging coefficient decreased sharply with the film thickness increasing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 198, August 2015, Pages 20-24
نویسندگان
, , , , , , ,