کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7925881 1512510 2018 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
AlGaInAs EML having high extinction ratios fabricated by identical epitaxial layer technique
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
AlGaInAs EML having high extinction ratios fabricated by identical epitaxial layer technique
چکیده انگلیسی
AlGaInAs electroabsorption-modulated lasers (EMLs) fabricated by identical epitaxial layer technique are demonstrated. The EML device shows an infinite characteristic temperature when the temperature ranges from 20 oC to 30 oC. The integrated modulator has static extinction ratios of larger than 20 dB at a reverse bias voltage of −2 V. The small signal modulation bandwidth of the modulator is larger than 11 GHz. At 10 Gb/s data modulation, the dynamic extinction ratio is about 9.5 dB in a back to back test configuration. Because only a simple fabrication procedure is needed, our EMLs are promising low cost light sources for optical fiber transmission applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 413, 15 April 2018, Pages 54-57
نویسندگان
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