Single photon emissions from InAs/GaAs quantum dots embedded in GaAs/SiO2 hybrid microdisks

An approach to integrate InAs/GaAs quantum dots (QDs) active layer on SiO2/Si chip for single photon emitter is demonstrated. The QDs are embedded in GaAs/SiO2 hybrid whispering gallery mode microdisks with the diameters of 10 and 5 μm, corresponding to the quality factors (Q) of 2287 ± 167 and 4366 ± 208, respectively. Temperature tuning QD-cavity resonance is observed. The cavity-enhanced exciton spontaneous emission and single photon emission characteristics are studied.