کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7929318 | 1512567 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Resolution characteristics of graded band-gap reflection-mode AlGaAs/GaAs photocathodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
The modulation transfer function (MTF) of graded band-gap AlGaAs/GaAs reflection-mode photocathodes was determined using two-dimensional Poisson and continuity equations through numerical method. Based on the MTF model, we calculated the theoretical MTF of graded and uniform band-gap reflection-mode photocathodes. We then analyzed the effects of Al composition, wavelength of incident photon, and thicknesses of AlGaAs and GaAs layer on the resolution. Calculation results show that graded band-gap structures can increase the resolution of reflection-mode photocathodes. When the spatial frequency is 800Â lp/mm and wavelength is 600 nm, the resolution of graded band-gap photocathodes generally increases by 15.4-29.6%. The resolution improvement of graded band-gap photocathodes is attributed to the fact that the built-in electric field in graded band-gap photocathodes reduces the lateral diffusion distance of photoelectrons.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 356, 1 December 2015, Pages 278-281
Journal: Optics Communications - Volume 356, 1 December 2015, Pages 278-281
نویسندگان
Wenjuan Deng, Daoli Zhang, Jijun Zou, Xincun Peng, Weilu Wang, Yijun Zhang, Benkang Chang,