کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7930324 | 1512587 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We fabricated the light-emitting diodes (LEDs) consisting of n-ZnO/p-NiO/p-Si heterostructure by using metal-organic chemical vapor deposition (MOCVD) combined with radio frequency (RF) magnetron sputtering. The devices exhibited diode-like rectifying current-voltage characteristics and had a turn-on voltage of 6.8Â V. Under forward bias, a prominent broad emission peaked around 400-650Â nm was observed at room temperature. The asymmetric electroluminescence (EL) spectra were consisted of two apparent bands, which located at 420 and 495Â nm corresponding to the violet and green luminescence, respectively. Furthermore, the mechanism of the light emission was tentatively discussed in terms of the band diagrams of the heterojunction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 336, 1 February 2015, Pages 1-4
Journal: Optics Communications - Volume 336, 1 February 2015, Pages 1-4
نویسندگان
Yang Zhao, Hui Wang, Chao Wu, Wancheng Li, Fubin Gao, Guoguang Wu, Baolin Zhang, Guotong Du,