کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7931861 | 1512611 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Advantages of GaN based light-emitting diodes with p-AlGaN/InGaN superlattice last quantum barrier
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The advantages of GaN based light-emitting diodes (LEDs) with strain-compensated p-AlGaN/InGaN superlattice (SL) last quantum barrier (LQB) are investigated numerically. The simulation results indicate that the output power and internal quantum efficiency have been improved significantly by replacing the last barrier of the conventional u-GaN and p-GaN with p-AlGaN/InGaN SL. These improvements are mainly attributed to the improvement of electron confinement and hole injection efficiency caused by mitigating the polarization-induced band bending of last barrier with the new designed structure. Moreover, the efficiency droop of the LEDs is markedly improved by using p-AlGaN/InGaN SL as last barrier.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 312, 1 February 2014, Pages 85-88
Journal: Optics Communications - Volume 312, 1 February 2014, Pages 85-88
نویسندگان
Jian-Yong Xiong, Yi-Qin Xu, Shu-Wen Zheng, Fang Zhao, Bin-Bin Ding, Jing-Jing Song, Xiao-Peng Yu, Tao Zhang, Guang-Han Fan,