کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7934933 | 1513046 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interface properties of ITO/n-Si heterojunction solar cell: Quantum tunneling, passivation and hole-selective contacts
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی های تجدید پذیر، توسعه پایدار و محیط زیست
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چکیده انگلیسی
In this report, a numerical simulation for ITO/n-Si based hetero-junction (ISHJ) photovoltaic device has been carried out by using AFORS-HET software and a proper model, in which the naturally derived interface layer with a ternary-like hybrid of a-SiOx(In) is assumed to be a double stacks of 1.2â¯nm quasi p type semiconductor and 0.2â¯nm insulator as buffer layer. The negative charge centers, in the range of >1â¯Ãâ¯1017â¯cmâ3, associated with oxygen vacancies and indium-ion correlative ternary hybrid in the intermediate region play multi-roles, including field effect passivation, inducing inversion layer and acting selective contacts to a certain extent. The simulation results manifest that the intermediate region behaviors as a semiconductor material with a wide band gap of 2.06â¯eV, which is suitable for the transport of hole and an induced quasi p-n junction. Additionally, the simulated J-V curve arisen from the key opto-electric parameters of the device by the simulation agrees with the experimental one with a high fill factor of 74.2% well.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy - Volume 173, October 2018, Pages 456-461
Journal: Solar Energy - Volume 173, October 2018, Pages 456-461
نویسندگان
X.M. Song, M. Gao, Z.G. Huang, B.C. Han, Y.Z. Wan, Q.Y. Lei, Z.Q. Ma,