کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
795157 1466758 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structure and luminescent properties of GaN nanorods grown by magnetron sputtering and ammoniating technique
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی صنعتی و تولید
پیش نمایش صفحه اول مقاله
Structure and luminescent properties of GaN nanorods grown by magnetron sputtering and ammoniating technique
چکیده انگلیسی

A novel rare earth metal seed Tb was employed as the catalyst to grow GaN nanorods. Large-scale GaN nanorods were synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si(1 1 1) substrates. Studies by X-ray diffraction indicate that the nanorods are hexagonal GaN. Observations by scanning electron microscopy and high-resolution transmission electron microscopy show that GaN is of single-crystal nanorod structure. Photoluminescence spectrum shows the products possess good luminescent properties. The growth mechanism of GaN nanorods is also discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Materials Processing Technology - Volume 208, Issues 1–3, 21 November 2008, Pages 255–258
نویسندگان
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