کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7955346 | 1513804 | 2017 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermodynamic modeling of the V-Si-B system
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In the present work, the V-Si-B ternary system was thermodynamically modeled using the CALPHAD method. The thermodynamic descriptions of the V-Si and B-Si binary systems were taken from literature while the parameters of binary V-B were re-evaluated, based on new experimental information. The ternary thermodynamic description was based on experimental data of isothermal section and liquidus projection. The binary compounds V3B2, VB, V5B6, V3B4, V2B3 and VB2 were modeled as stoichiometric phases; the terminal solid solutions BCC and β-Rhomb were modeled using the sublattice models (V,Si)1(B,va)3 and (B)93(B, Si)12; the ternary phases D88 and T2 were modeled as (V)0.5556(B,Si)0.3333(B,va)0.1111 and (V)0.625(B,Si)0.375, respectively. A set of thermodynamic parameters is proposed and the results showed a good agreement with available experimental information from the literature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Calphad - Volume 59, December 2017, Pages 199-206
Journal: Calphad - Volume 59, December 2017, Pages 199-206
نویسندگان
Antonio Augusto Araujo Pinto da Silva, Nabil Chaia, Flavio Ferreira, Gilberto Carvalho Coelho, Jean-Marc Fiorani, Nicolas David, Michel Vilasi, Carlos Angelo Nunes,