An improved three-point bending test method for the investigation of nanosecond laser dicing of ultrathin Si dies with Cu stabilization layer

The sidewall fracture strength of ultrathin Si dies with frontside and backside metallization layers cannot be determined directly from three-point bending (3PB) test. The complex 3PB elastoplastic stress distribution makes it difficult to determine the die sidewall fracture strength by analytical method or finite element analysis due to various theoretical and practical constraints. In this work, a selective chemical etching method has been developed for complete removal of the frontside and backside metallization layers on the ultrathin die without affecting the critical microstructure and strength of the die sidewall induced by laser dicing. By removing all the metallization layers on the die, the complex 3PB elastoplastic stress distribution is simplified to an elastic stress distribution. This enables a straightforward calculation of the die sidewall fracture strength using the standard 3PB tensile stress equation for a homogeneous linear elastic material with a rectangular cross section. Two chemical etchants were evaluated and found to be suitable but FeCl3 is preferred because of the much faster etching time. With this improved 3PB test method, the effect of nanosecond laser dicing on ultrathin Si dies with backside Cu layer was investigated. The die frontside and backside characteristic fracture strengths of ultrathin Si dies with varying backside Cu thickness were determined and correlated to TEM analyses of the compositions and microstructures at the fracture origins.