Micro-structural evolution during diffusion bonding of C-SiC/C-SiC composite using Ti interlayer

Diffusion bonding of C-SiC composite was achieved with Ti interlayer at 1500 °C for 3 h with the applied pressure of 20 MPa. The joined C-SiC composite showed the apparent shear strength of 19 MPa and the sample fractured away from the joint. The microstructure of joint consists of Ti3SiC2 MAX phase, TiSi2 and TiC in which Ti3SiC2 was the major phase. The distribution of phases in the microstructure of joint was categorized into three different zones based on electron backscattered diffraction (EBSD) results. The first zone consists of a thin continuous TiSi2 phase, which was followed by a thick zone of Ti3SiC2 MAX phase. In the middle of the sample, a mix phase zone was found. The reaction mechanism was established for the evolution above microstructure of joined C-SiC composite.