کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7971541 | 1514609 | 2018 | 20 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of Si micro-addition on creep resistance of a dilute Al-Sc-Zr-Er alloy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A dilute Al-0.06Sc-0.02Zr-0.005Er (at%) alloy, to which 0.09â¯at% Si was added, was peak-aged to create a high number density of (Al,Si)3(Sc,Er,Zr) precipitates, 3.6â¯nm in radius. The alloy shows a high resistance to dislocation creep, with a threshold stress of 18â¯MPa at 400â¯Â°C. After further aging under applied stress for ~â¯1000â¯h at 400â¯Â°C, the threshold stress increases to 22â¯MPa, with the precipitates growing to a radius of 4-8â¯nm. This represents a very substantial improvement in creep resistance as compared to a similar alloy with one-third the Si content, 0.03â¯at%, whose threshold stress at 400â¯Â°C is 9-14â¯MPa. Atom probe tomography reveals that, for the new higher-Si alloy, the precipitates have an average Si concentration of 3.3â¯at% and show a broad core with uniform Sc-, Si- and Er concentrations and a thin Zr-enriched shell. By contrast, the low-Si alloy exhibits precipitates with half the average Si content, showing an Er-enriched core, a Sc-enriched inner-shell and a Zr-enriched outer-shell. A possible explanation for the higher creep resistance of the high-Si alloy is that the enhanced chemical homogeneity of Sc and Er in the core, as compared to the highly segregated core/shell/shell structure of the low-Si alloy, modifies the elastic strain field around precipitates so as to increase the repulsive force from the precipitate on the matrix dislocations climbing over them, thus enhancing the threshold creep stresses.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: A - Volume 734, 12 September 2018, Pages 27-33
Journal: Materials Science and Engineering: A - Volume 734, 12 September 2018, Pages 27-33
نویسندگان
Nhon Q. Vo, David N. Seidman, David C. Dunand,