کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7971582 | 1514611 | 2018 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of annealing on the microstructures and mechanical properties of Al/Mg/Al laminates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Al/Mg/Al laminates were fabricated by hot rolling at 400â¯Â°C and annealed at temperature ranging from 200â¯Â°C to 400â¯Â°C for 1â¯h to 4â¯h. Microstructural examination revealed that brittle intermetallics identified as Mg17Al12 and Al3Mg2 appeared at Mg/Al interface when annealing temperature exceeded 300â¯Â°C. Al layers in laminates annealed at 200â¯Â°C exhibited typical copper-type texture, which totally transformed to recrystallized cube texture at 400â¯Â°C with a higher intensity. Mg layers in annealed laminates presented (0002) basal texture with c-axis titling from normal direction (ND) to rolling direction (RD), and bimodal basal texture was observed at 400â¯Â°C. Recrystallization extent of Mg layer increased with the increase in annealing temperature and/or annealing time, and nuclei preferred to occur in grains near Mg/Al interface. Grain size, texture type of matrix, and thickness of intermetallic layers all influence mechanical properties of Al/Mg/Al laminates. Laminates annealed at 200â¯Â°C for 1-4â¯h exhibited better ultimate tensile strength (UTS) ranging from 223â¯MPa to 240â¯MPa and elongation (EL) ranging from 21% to 26%. Despite more extensive recrystallization of laminate annealed at 400â¯Â°C, thicker intermetallics greatly decreased its strength and plasticity because crack initials and quickly propagates along Mg/Al interface or in the interior of intermetallics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: A - Volume 732, 8 August 2018, Pages 6-13
Journal: Materials Science and Engineering: A - Volume 732, 8 August 2018, Pages 6-13
نویسندگان
Huihui Nie, Wei Liang, Hongsheng Chen, Liuwei Zheng, Chengzhong Chi, Xianrong Li,