| کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن | 
|---|---|---|---|---|
| 7977148 | 1514701 | 2015 | 6 صفحه PDF | دانلود رایگان | 
عنوان انگلیسی مقاله ISI
												Microstructure and tensile properties of hot fogred high Nb containing TiAl based alloy with initial near lamellar microstructure
												
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																																												کلمات کلیدی
												
											موضوعات مرتبط
												
													مهندسی و علوم پایه
													مهندسی مواد
													دانش مواد (عمومی)
												
											پیش نمایش صفحه اول مقاله
												 
												چکیده انگلیسی
												High Nb containing TiAl based alloy with a nominal composition of Ti-44Al-8Nb-0.2W-0.2B-Y (in at%) exhibiting near lamellar microstructure was fabricated. Cylindrical blanks were quasi-isothermal forged at 1275 °C for 0.05 sâ1, with a total reduction of 70%. The as-forged blanks were furnace-cooled (FCed) or air-cooled (ACed). The microstructure of the as-forged alloy mainly consists of remnant lamellar colonies (RL) and broken-down (BD) area caused by inhomogeneous deformation. Lamellar orientation and α2 lath thickness strongly affect the deformation of lamellar colonies. In the RL structure, the α2 phase s are remain in lath states and the γ laths recrystallized. The Blackburn relationship between the previous α2 lath and the γ lath in the RL structure is disrupted. Meanwhile, stress induced αâγ phase transformation generates the optimal perfect Blackburn relationship between the parent α2 lath and newborn γ grains. Cooling rate significantly affects the as-forged microstructure, thereby influencing the bulging rate of γ phase boundaries into α2 phases. Cooling rate also influences the tensile properties of the alloy.
											ناشر
												Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: A - Volume 642, 26 August 2015, Pages 16-21
											Journal: Materials Science and Engineering: A - Volume 642, 26 August 2015, Pages 16-21
نویسندگان
												S.Z. Zhang, C.J. Zhang, Z.X. Du, Z.P. Hou, P. Lin, Y.Y. Chen,