کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7979883 | 1514728 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Early precipitation of Ni2(Cr,Mo) phase
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The early precipitation behavior of long-range-ordered (LRO) Ni2(Cr,Mo) strengthening phase in a Ni-21Cr-17Mo (wt%) superalloy that was subjected to a patent two-step heat treatment (705 °C/16 h/furnace cooling - 605 °C/32 h/air cooling) was revealed by means of transmission electron microscopy (TEM) and electron diffraction pattern (EDP) analysis. The coherent interfacial structure between the long-range-ordered Ni2(Cr,Mo) precipitate and the Ni-based matrix leads to the excellent strengthening effect of the alloy. High-spatial-resolution energy-disperse X-ray spectrum (EDX) analysis reveals that the Ni2(Cr,Mo) precipitates were slightly rich in Mo. The minor microstructure change after the key first-step heat treatment was especially focused on. It was found that weak streak fringes were present along ã311ãNi-baseâ directions in the EDP along the [112] zone axis and the ordered nano-regions parallel to {311}Ni-base planes were distributed homogeneously in the matrix. Combined with the detailed microstructural characteristic, it is concluded that Mo atoms might enrich at every two {311}Ni-base planes during the first step of aging at high temperature (705 °C), which could increase the transition temperature of Ni2Cr resulting in its formation when aging at the second aging step of 605 °C. Meanwhile, Ni2(Cr,Mo) phase precipitates by the substitution of Mo atoms for Cr atoms every three {311}Ni-base planes in Ni2Cr phase with the continuous long-range diffusion of Mo atoms.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: A - Volume 615, 6 October 2014, Pages 1-6
Journal: Materials Science and Engineering: A - Volume 615, 6 October 2014, Pages 1-6
نویسندگان
J.W. Bai, R. Yu, Y.M. Zhu, P.P. Liu, Y.B. Wang, X.S. Xie, Z.B. He, Q. Zhan,