کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7983461 | 1514779 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dependence of the hardness of AlxGa1âxAs on composition and effect of oxidation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The mechanical properties of semiconductor materials determine the reliability of microelectronics. The hardness of Al1âxGaxAs is investigated together with oxidation and its effect on this parameter. A structure consisting of three AlxGa1âxAs layers of different composition separated by In0.01Ga0.99As etch stops was deposited via metal-organic vapor phase epitaxy. High resolution x-ray diffraction determined the composition of the baseline layers to be Al0.9Ga0.1As, Al0.8Ga0.2As and Al0.7Ga0.3As. Nanoindentation measurements demonstrated that hardness decreases with aluminum content following a linear correlation. To study the effect of oxidation on hardness, two samples of Al0.8Ga0.2As were oxidized in air at 475 °C for 2 and 4 h. The surface morphology of the oxide imaged using atomic force microscopy was granular. X-ray diffraction simulated curves estimated the Al0.8Ga0.2As thickness decrease due to oxidation. The growth of the oxide layer was linear with time indicating that the process is reaction-rate limited and the layer is porous. The hardness of the (Al0.8Ga0.2)2O3 oxide was extrapolated to be more than twice the value of the baseline sample.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: A - Volume 564, 1 March 2013, Pages 408-412
Journal: Materials Science and Engineering: A - Volume 564, 1 March 2013, Pages 408-412
نویسندگان
A. Zakaria, W. Hong, R. Woo, M.S. Goorsky,