کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7987711 1515414 2016 19 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
III-V compound semiconductors: Growth and structures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
III-V compound semiconductors: Growth and structures
چکیده انگلیسی
The semiconductors formed from group 13 metals and from group 15 anions, referred to as the III-V semiconductors, have found use in a broad range of technologies. Their versatility arises from the wide range of optical and electronic properties accessed through the formation of multi-component alloys. These alloys can be synthesized using the epitaxial growth techniques for devices consisting of several-to-hundreds of highly controlled individual layers monolithically formed into a nearly defect-free structure. This ability to design and fabricate such detailed structures, whose dimensions can be at the nanometer scale, has been driven by an understanding of the crystal growth and materials technology. The paper introduces key features of these materials, their materials science and crystal growth.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Progress in Crystal Growth and Characterization of Materials - Volume 62, Issue 2, June 2016, Pages 352-370
نویسندگان
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