کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8012383 | 1517158 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of wide band-gap CuGaSe2 solar cells for tandem device applications by sputtering from a ternary target and post selenization treatment
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Fabrication of wide band-gap (Eg) CuGaSe2 (CGSe) thin film solar cells with large area uniformity and good reproducibility is difficult, which is crucial for tandem cells. In this work, a method was proposed and investigated to overcome this problem. CGSe solar cells were fabricated by sputtering from a ternary CGSe target and post selenization treatment at different temperatures. After selenization, the CGSe grains grow up gradually, and the copper-poor and selenium-rich CGSe absorbers are obtained successfully. The X-ray diffraction peaks are all corresponded to CGSe phase. As the temperature increases from 530 to 570â¯Â°C, the average efficiency increases from 1.57% to 3.11%. When the temperature reaches 590â¯Â°C, the efficiency drops to 2.38%. The champion device obtained at 570â¯Â°C shows an Eg of 1.66â¯eV and an efficiency of 3.21%, which indicates the potential for the top cell in tandem solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 230, 1 November 2018, Pages 128-131
Journal: Materials Letters - Volume 230, 1 November 2018, Pages 128-131
نویسندگان
Yaowei Wei, Daming Zhuang, Ming Zhao, Ning Zhang, Xinping Yu, Rujun Sun, Leng Zhang, Xunyan Lyu, Xiao Peng, Jinquan Wei,