کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8012649 | 1517161 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of dual nitridation processes in growth of non-polar a-plane AlGaN epi-layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effect of dual nitridation processes for both r-plane sapphire and low temperature-grown AlN (LT-AlN) nucleation layer on non-polar a-plane AlGaN epi-layer was studied intensively. A root-mean-square value as small as 1.54â¯nm for a-plane Al0.53Ga0.47N epi-layer was achieved. It was revealed that the generation of AlN grains as well as the coalescence and recrystallization of LT-AlN islands were the key factors for growing a-plane AlGaN epi-layers with smooth surface morphology. Meanwhile, the evolution of surface morphology with varied nitridation processes and the mechanisms for improving surface morphology of a-plane AlGaN epi-layers were also investigated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 227, 15 September 2018, Pages 108-111
Journal: Materials Letters - Volume 227, 15 September 2018, Pages 108-111
نویسندگان
Jianguo Zhao, Xiong Zhang, Shuai Chen, Jiaqi He, Aijie Fan, Zili Wu, Shuchang Wang, Yushen Liu, Jinfu Feng, Yiping Cui,