کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8014207 | 1517171 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhanced thermoelectric properties of Te-doped and In, Ba double-filled CoSb3 composites by high pressure technology
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, Te-doped multifilled n-type skutterudite compounds were prepared by high pressure and high temperature (HPHT) method and characterized by X-ray and SEM, which showed that InxBa0.2-xCo4Sb11.5Te0.5 samples with fine grain size can be prepared by HPHT rapidly. Both thermal transport properties and electrical transport properties have been characterized in the temperature range of 363-765â¯K. The combination of (In, Ba) double-filled and Te-doped is more effective than simple Te-doped or the combination of In-filled and Te-doped in reducing lattice thermal conductivity. Finally, the figure of merit value (ZT) of In0.15Ba0.05Co4Sb11.5Te0.5 reached 1.11 at 765â¯K. This showed that the ZT values of samples can likely be improved through combining multiple filling atoms and doping atoms to broaden the range of resonant phonon scattering.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 217, 15 April 2018, Pages 44-47
Journal: Materials Letters - Volume 217, 15 April 2018, Pages 44-47
نویسندگان
L. Deng, L.B. Wang, J. Ni, J.M. Qin, X.P. Jia, H.A. Ma,