Influence of [6,6]-Phenyl-C61-butyric Acid Methyl Ester doping on Au/CH3NH3PbI3/Au metal-semiconductor-metal (MSM) photoelectric detectors

In this manuscript, Au/CH3NH3PbI3/Au metal-semiconductor-metal (MSM) photoelectric detectors with different concentrations of [6,6]-Phenyl-C61-butyric Acid Methyl Ester (PCBM) doping are studied. It is found that with PCBM doping, the zero voltage shifts of MSM detector are inhibited, and the dark currents increase slightly which result in the smaller light-dark current ratio and detectivity. It is speculated that the vacancies in CH3NH3PbI3 are filled by PCBM, and the captured electrons are release. The MSM detector with 0.01 wt% PCBM doping shows high responsivity (35 mA W−1), detectivity (4.126 × 1010 Jones) and response time (<2 ms) under 5 V bias voltage, respectively. It is indicated that appropriate proportion of PCBM doping is a suitable way to optimize the performance of perovskite-based photo-detectors.