کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8014680 | 1517172 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Controlled synthesis of highly crystalline CVD-derived monolayer MoSe2 and shape evolution mechanism
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Ultrathin two-dimensional transition metal dichalcogenides (TMDCs) have shown significant potential for diverse applications in semiconductor industry. The controlled synthesis of TMDCs is a prerequisite for its potential application. Unfortunately, controllable synthesis is still a great challenge. Here, we report an experimental method to induce a broad range of morphologies in highly crystalline, monolayer MoSe2 thin films by H2 content engineering. A growth mechanism was proposed to clarify the formation process for variable-shaped MoSe2 crystals. We attributed the evolution in morphologies to a result of the variable growth rates of two types of terminations that occur under different growth conditions. Our work provides a foundation for the controlled synthesis of MoSe2, reveals the shape evolution of CVD-derived MoSe2 and broadens the application range based on its shape-dependent properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 216, 1 April 2018, Pages 261-264
Journal: Materials Letters - Volume 216, 1 April 2018, Pages 261-264
نویسندگان
Yue Li, Fang Wang, Dengxuan Tang, Junqing Wei, Yi Li, Yupeng Xing, Kailiang Zhang,