کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8015193 | 1517175 | 2018 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Studies on the electrical properties of Cu2NiSnS4 thin films prepared by a simple chemical method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this paper, the Cu2NiSnS4 (CNTS) thin films were synthesized by a simple chemical method using Spray Sandwich technique without any annealing treatment. The prepared CNTS thin films were studied by X-ray diffraction (XRD) and impedance spectroscopy. The result obtained from the XRD measurements showed that CNTS thin films are polycrystalline in nature with cubic structure and preferred orientation along (1â¯1â¯1) plane. Electrical study of CNTS thin films is investigated by impedance spectroscopy for the first time. The activation energies Ea obtained from both angular frequency and DC conductivity are found to be 1.18 and 1.1â¯eV, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 213, 15 February 2018, Pages 31-34
Journal: Materials Letters - Volume 213, 15 February 2018, Pages 31-34
نویسندگان
N. Bitri, S. Dridi, F. Chaabouni, M. Abaab,