Vertically aligned crystalline SnS layers-based NIR photodetector governed by pyro-phototronic effect

Vertically aligned crystalline SnS layers were applied for the high-performing near-infrared (NIR) photodetector. Sputtering method was used to align the vertical SnS layers with an interlayer space of 0.56 nm on a large-scale Si substrate. Raman and XPS analyses confirmed the quality of SnS layers. Under NIR illumination, the SnS/Si photodetector showed the ultra-fast photoresponses (rise time of ∼12 μs and fall time of ∼42 μs) without an external bias. Due to the effect of the pyro-phototronic potential, high-performing photodetectivity was achieved to be 4.2 × 1014 Jones. This excellent performance was attributed to the photon-induced pyroelectric effect in the vertically grown SnS layers. This novel approach of 2-dimensitonal material will open a new possibility to design ultra-performing photoelectric devices, including photodetectors and solar energy devices.