کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8015557 | 1517176 | 2018 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Catalyst-free growth of high purity 3C-SiC nanowires film on a graphite paper by sol-gel and ICVI carbothermal reduction
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Catalyst-free growth of high purity 3C-SiC nanowires film on a graphite paper by sol-gel and ICVI carbothermal reduction Catalyst-free growth of high purity 3C-SiC nanowires film on a graphite paper by sol-gel and ICVI carbothermal reduction](/preview/png/8015557.png)
چکیده انگلیسی
3C-SiC nanowires have been synthesized without any catalyst by carbothermal reduction method, which obtained silicon and carbon source from sol-gel impregnation and isothermal chemical vapor immersion (ICVI) process respectively. The microstructure analysis by SEM showed the nanowires with a diameter of â¼200â¯nm and a length of several millimeters were hierarchical. TEM images and XRD data from the nanowires revealed them to have the cubic 3C-SiC structure. The vapor solid epitaxial mechanism was also proposed to explain the growth process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 212, 1 February 2018, Pages 86-89
Journal: Materials Letters - Volume 212, 1 February 2018, Pages 86-89
نویسندگان
Hongjiao Lin, Hejun Li, Qingliang Shen, Xiaohong Shi, Xinfa Tian, Lingjun Guo,