کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8015776 | 1517176 | 2018 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of n-Cu2O films by anodisation and their photoelectrochemical properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication of n-Cu2O films by anodisation and their photoelectrochemical properties Fabrication of n-Cu2O films by anodisation and their photoelectrochemical properties](/preview/png/8015776.png)
چکیده انگلیسی
In this paper, Cu2O films were prepared by an anodisation method in 1.0â¯wt% NH3·H2O electrolyte. The influence of preparation conditions on photoelectrochemical properties was investigated. Results show that anodisation voltage and reaction time exerted significant influence on semiconductor types and photocurrent values. Only under the conditions of appropriate voltage and time could n-Cu2O films be prepared. When the voltage was 10â¯V and anodisation time was 30 to 90â¯min, the films had a larger oxidation photocurrent (n-type semiconductor), with a current density of â101â¯Î¼A/cm2 to â143â¯Î¼A/cm2. The reasons for formation of n-Cu2O films have been discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 212, 1 February 2018, Pages 315-318
Journal: Materials Letters - Volume 212, 1 February 2018, Pages 315-318
نویسندگان
Hongli Hu, Xixin Wang, Liyuan Gong, Xiaofei Yu, Xuewen Xu, Jianling Zhao,