کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8016149 | 1517204 | 2016 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Si1âxGex photodiode with segregated Ge nanocrystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Si1âxGex photodiode with segregated Ge nanocrystals Si1âxGex photodiode with segregated Ge nanocrystals](/preview/png/8016149.png)
چکیده انگلیسی
P-N junction diodes with excellent rectifying characteristics were prepared by segregating the Ge nanocrystals of Si1âxGex thin films deposited by co-sputtering. The current-voltage characteristics in darkness and under illumination were studied. The correlation between the p-n junction performance and the microstructure of the films is discussed, and the rectifying property became stronger as the fraction of Ge in the Si1âxGex films increased. The optical bandgap can be tuned by controlling the grain size in Ge and SiGe nanocrystals. The graded structure of the Si1âxGex photodiode is proposed to widen the light absorption region. The concept can be used to design high-efficiency photodiodes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 184, 1 December 2016, Pages 308-311
Journal: Materials Letters - Volume 184, 1 December 2016, Pages 308-311
نویسندگان
Yao-Tsung Ouyang, Hsien-Chien Hsieh, Po-Chen Lin, Tsan-Hsien Tseng, Ching-Shun Ku, Hsin-Yi Lee, Albert T. Wu,