Investigation of photoluminescence dynamics in InGaN/GaN multiple quantum wells

This paper reports the transient photoluminescence properties of a typical InGaN/GaN multiple quantum well light emitting diode structure. Two decay processes were found to contribute to the photoluminescence dynamics. Based on the exciton localization model, key factors, transient lifetimes of radiative/nonradiative recombination, were obtained respectively for two decay processes by numerically fitting and separating the mixed photoluminescence efficiencies and photoluminescence decay data, which provide guidance to trace the origins of exciton localization. The origins of slow PL process and fast PL process were reasonably assigned to local compositional fluctuations of indium and thickness variation of InGaN layers, respectively.