کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8017406 1517219 2016 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Importance of substrate rotation speed on the growth of homogeneous ZnO thin films by reactive sputtering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Importance of substrate rotation speed on the growth of homogeneous ZnO thin films by reactive sputtering
چکیده انگلیسی
Undoped zinc oxide (ZnO) thin films were reactively deposited on soda-lime glass substrates by radio frequency (rf) sputtering at room temperature. We have studied the importance of substrate rotation speed on the structural, optical and morphological properties. The rotation speeds used were 0, 20, 40, 60, and 80 rpm. The XRD measurements confirmed that films were grown with (002) plane preferential orientation. The average transmittance was above 90% in the UV-vis region. The SEM images revealed that films deposited with substrate rotation are more homogeneous than the films deposited without rotation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 169, 15 April 2016, Pages 1-4
نویسندگان
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