Investigation of SiC doped Sb3Te alloy for high-speed and high-thermal stability phase change random access memory applications

Silicon carbide (SiC) doped Sb3Te materials have been investigated for realizing high speed blending with admirable endurance and excellent stability in phase-change applications. (SiC)0.85-Sb3Te alloy is considered to be a potential candidate in view of its high crystallization temperature (199.6 °C) and a good data retention ability (118.5 °C for 10 years). The prominent advantages can be seen in comparison with those of pure Sb3Te and Ge2Sb2Te5. Moreover, phase change memory cell based on (SiC)0.85-Sb3Te achieves ultrafast reversible operation (5 ns) and good endurance (3.9×104 cycles) easily due to dopants' uniform distribution and a key role in grain refinement.