کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8017752 | 1517227 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation and characterization of ternary Al-In-O films on Y-stabilized ZrO2 substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The ternary Al-In-O (Al2xIn2â2xO3) films with different Al contents x[Al/(Al+In) atomic ratio] were prepared on the Y-stabilized ZrO2 (100) substrates by metal organic chemical vapor deposition (MOCVD) at 600 °C. The structural, optical and electrical properties of the films as a function of Al content (x=0.1-0.9) were investigated. With the increase of x from 0.1 to 0.9, a phase transition from the bixbyite In2O3 structure with a single orientation along (100) to the amorphous structure was observed. The average transmittances of the Al2xIn2â2xO3 films in the visible range were all over 76% and the optical band gap of the films was varied from 3.68 to 4.77 eV. The film with Al content of x=0.2 had the lowest resistivity of 7.82Ã10â3 Ω cm, a carrier concentration of 9.81Ã1019 cmâ3 and a Hall mobility of 8.17 cm2 vâ1 sâ1.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 161, 15 December 2015, Pages 68-71
Journal: Materials Letters - Volume 161, 15 December 2015, Pages 68-71
نویسندگان
Xianjin Feng, Zhao Li, Cansong Zhao, Yi Luo, Jin Ma,