کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8018087 1517231 2015 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Control of Se layer thickness in two-step selenization and sulfurization of CuGa/In/Se precursors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Control of Se layer thickness in two-step selenization and sulfurization of CuGa/In/Se precursors
چکیده انگلیسی
Sputter-deposited bilayer CuGa/In precursors were coated by a Se layer with a different thickness from 0.5 to 1.5 μm to yield glass/Mo/CuGa/In/Se structure. Selenization of the precursors with a 0.5 μm-thick Se layer resulted in partial selenization with a relatively uniform distribution of Ga, whereas Cu(InGa)Se2 formed from 1.0 and 1.5 μm-thick Se layers showed complete selenization but with Ga accumulation at the bottom. Partial selenization of the Se-coated metal precursors by a 0.5 μm-thick Se layer was confirmed to yield better incorporation of S and effective re-distribution of Ga to form Cu(InGa)(Se,S)2 films with homogenous depth profiles of Ga and S.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 157, 15 October 2015, Pages 183-187
نویسندگان
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