Next generation promising Cu2(ZnxFe1−x)SnS4 photovoltaic absorber material prepared by pulsed laser deposition technique

In this study, pioneering work has been carried out for the preparation of Cu2(ZnxFe1−x)SnS4 (CZFTS) thin films by the pulsed laser deposition technique. The effects of changing the Zn/Fe ratio of the targets on the properties of CZFTS thin films were investigated. Field emission scanning electron microscopy studies revealed that all CZFTS thin films exhibited highly compact, smooth, and homogeneous surfaces. X-ray diffraction and Raman studies on CZFTS thin films showed the transformation of the kesterite to stannite phase with variation of Zn/Fe ratio. High resolution transmission electron microscope image for CFTS film showed d-spacing of 0.32 nm consistent with the (112) plane. The direct optical band gap for CZFTS thin films was found to be in the range of 1.33-1.74eV.