Structural evolution and corresponding electrical properties of V-doped Ge2Sb2Te5 with increased temperature

A series of V-doped Ge2Sb2Te5 films were prepared via magnetron co-sputtering. The V content ranged from 3.3 to 20.1 at%, as determined via energy-dispersive spectrometry. The influence of the V content on the crystallization behavior and electrical properties was investigated using X-ray diffraction, electrical resistivity measurements and in situ transmission electron microscope annealing. The results indicated that adding V to Ge2Sb2Te5 films within a certain amount enhances the electrical resistance and thermal stability. These results also indicate that V doping leads to aphase change from being amorphous to a face-centered cubic (fcc) structure below 350 °C. As a result, V doped Ge2Sb2Te5 composite films can be considered as a promising material for phase change memory.