Characterization of ZnO-SnO2 nanocomposite thin films deposited by pulsed laser ablation and their field effect electronic properties

Amorphous ZnO-SnO2 nanocomposite thin films consisting of ZnO and SnO2 nanoparticles were produced by PLD with pie-shaped ZnO-SnO2 oxide targets. ZnO-SnO2 nanocomposite thin film transistors (TFTs) were fabricated, and showed excellent electronic transport properties with saturation mobility of around 16.9 cm2/V s, turn-on voltage of~−1 V, subthreshold swing of 0.22 V/decade, and drain current on-to-off ratio of over 1010.