کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8020817 | 1517266 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhanced preferential orientation and electrical property of fluorine-doped SnO2 thin films via barrier layer
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Polycrystalline fluorine-doped SnO2 thin films with SiCxOy or SixSnyO2 barrier layer are deposited on glass substrates by atmospheric pressure chemical vapor deposition (APCVD) method. The effect of barrier layer on structure and electrical property of FTO films was investigated. Results show that the inserting of barrier layer, especially the SiCxOy layer, has led to the improved crystallinity and the enhanced preferential orientation along the (2Â 0Â 0) crystallographic plane. SnO2:F/SiCxOy/Glass films with larger grain size and a columnar growth structure exhibited lower resistivity (~4.9Ã10â4), higher reflectance in the mid-far-infrared region (~80%) and lower emissivity (0.16), while maintaining high transmittance in the visible range. The SiCxOy film has therefore been considered as a more ideal potential barrier layer for FTO thin film production.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 122, 1 May 2014, Pages 143-146
Journal: Materials Letters - Volume 122, 1 May 2014, Pages 143-146
نویسندگان
Qian Gao, Ming Li, Qiying Liu, Yongji Wang, Xiang Li, Xiao Wei, Chenlu Song, Jianxun Wang, Junbo Liu, Ge Shen, Gaorong Han,