Effect of A-site Bi-doping on the magnetic and electrical properties in TbMnO3

Bi doped TbMnO3 ceramics have been synthesized by solid state reaction, and the effect of substitution in TbMnO3 on the structural, magnetic and dielectric properties is investigated. The X-ray diffraction pattern shows that the samples have an orthorhombic structure. The Bi substitution is found to suppresses the Tb-spin ordering point (TTb) and ferroelectric ordering point (TC), which attributed to the strength reduction in the exchange interactions JTb-Tb and JMn-Tb. In addition, a dielectric relaxation with an activation energy of ~20 meV is observed at low temperature in Tb1−xBixMnO3, and the relaxorlike dielectric characteristics may be attributed to the dipolar effects induced by charge carrier hopping motions.