کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8022086 | 1517279 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of high-quality γ-In2Se3 nanostructures using magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
γ-In2Se3 thin films were successfully synthesized using the magnetron sputtering method on cost effective soda lime glass substrates. By adjusting growth process, two different micro- nanostructures were obtained, including the hexagonal platelets with uniformly flat surface and the single crystalline ribbons up to 5 μm long. X-ray diffraction and Raman studies confirmed the formation of polycrystalline hexagonal defect wurtzite structural In2Se3 grains. The In/Se ratio of nanoribbon was found to be approximately 2/3 as indicated by the composition analysis with energy dispersive X-ray spectroscopy. The In2Se3 nanostructures show absorbance in the visible region with direct band gap of 1.94 eV. Moreover, the formation mechanism of the nanoribbons has been regarded as a self-catalytic VS deposition process at low temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 109, 15 October 2013, Pages 291-294
Journal: Materials Letters - Volume 109, 15 October 2013, Pages 291-294
نویسندگان
Yong Yan, Shasha Li, Yaxin Ji, Lian Liu, Chuanpeng Yan, Yong Zhang, Zhou Yu, Yong Zhao,