Hydrogen-ion implantation effect on SiO2-matrix B-doped Si-NC thin films with improved conductivity

In this work, the SiO2-matrix B-doped Si-NC (BDS) thin films have been modified by hydrogen-ion implantation to improve their conductivity. The effects of hydrogen-ion energy on the structural and electrical properties of Si-NC thin films were investigated systematically using photoluminescence, X-ray photoelectron spectroscope and Hall measurements. Results showed that the order of the thin-film surface structure was perfected, the defect density and resistivity were both firstly reduced and then increased when the hydrogen-ion energy was increased from 0 eV to 500 eV. The BDS thin films passivated with hydrogen-ion implantation of 100 eV exhibited the lowest resistivity. The change in micro-structure and resistivity of the BDS thin films probably resulted from hydrogen ions which facilitated diffusion of the surface atoms and H atoms which passivated the defects.