Surface oxidation of multicrystalline silicon using atmospheric pressure plasma jet driven by radio frequency of 2.0Â MHz

Atmospheric pressure plasma jet (APPJ) has a potential interest for solar cell industrial applications. In this study, an APPJ driven by 2.0 MHz radio frequency was developed for surface oxidation of multicrystalline silicon (mc-Si) to solve potential induced degradation of Si-modules solar cell. Waveforms of current and voltage were recorded, optical emission spectrum of APPJ was analyzed, and the properties of the treated mc-Si were characterized as well. Ar/O2 mixture plasma jet will enhance the mc-Si surface oxidation due to generation of abundant active radials, such as O and OH, as well as rather high plasma temperature. Contact angle of mc-Si surface shows a transition of infiltration properties from hydrophobic to hydrophilic after a few seconds plasma treatment. Measurements from X-ray photoelectron spectroscopy and high resolution transmission electron microscopy confirm the formation of compact silicon oxides on the mc-Si surface, which causes an increase in carrier lifetimes of mc-Si.