Wafer-scale SiC rich nano-coating layer by Ar+ and Xe+ ion mixing

120 keV Xe+ (fluence 1 ∗ 1016 ion cm− 2) irradiation of C/Si made SiC rich layer. The material covered with the SiC rich layer was subjected to polysilicon etchant. RBS spectra were recoded before and after etching; there is no differenc is content. The SiC rich layer provides perfect protection against etching.138