کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8026258 | 1517604 | 2015 | 29 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation and characterization of LbL films based on graphene oxide nanoparticles interacting with 3-n-propylpyridinium silsesquioxane chloride
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Graphene oxide (GO) obtained by electrochemical exfoliation method was used to prepare a composite with the inorganic polymer, 3-n-propylpyridinium silsesquioxane chloride polymer, SiPy+. This composite (SiPy+(GO)) was applied as polyelectrolyte to form LbL films with nickel tetrasulfophthalocyanine (NiTsPc4 â) as polyanion. The absorbance of the NiTsPc4 â Q bands linearly increased with the number of deposited bilayers (SiPy+(GO)/NiTsPc4 â)n LbL films. From the graphics of absorbance as a function of the number of bilayers, it was possible to observe that the amount of NiTsPc4 â deposited on the FTO substrate is higher to the SiPy+(GO)/NiTsPc4 â than SiPy+/NiTsPc4 â films, as a consequence of the effective Ï-Ï interaction between the graphene and phthalocyanine molecules. The Raman spectra of the film with graphene oxide, SiPy+(GO)/NiTsPc4 â showed the GO “D” bands at 1339 cmâ 1, and the “G” bands at 1556 cmâ 1. The presence of GO in the SiPy+(GO)/NiTsPc4 â film was confirmed by the presence of “2D” band at 2686 cmâ 1, which is not observed in the SiPy+/NiTsPc4 â film. Cyclic voltammetric and EIS studies showed that the presence of graphene oxide nanoparticles in the film configuration considerably increased its conductivity when compared to the film without GO (SiPy+/NiTsPc4 â) which favors its application for the development of electrochemical sensors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 275, 15 August 2015, Pages 2-8
Journal: Surface and Coatings Technology - Volume 275, 15 August 2015, Pages 2-8
نویسندگان
R.B. Estevam, R.T. Ferreira, A.B.-H. Bischof, F.S. dos Santos, C.S. Santos, S.T. Fujiwara, K. Wohnrath, S.R. Lazaro, J.R. Garcia, C.A. Pessoa,