کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8027429 | 1517620 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of copper interlayer on deposition and flexibility improvement of diamond microelectrode
ترجمه فارسی عنوان
اثر مایه لایه مس در بهبود رسوب و بهبود انعطاف پذیری میکرو الکترودهای الماس
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
Tungsten with sputtered copper layer (W/Cu) and bare tungsten (W) substrates were investigated for boron doped diamond microelectrode (BDDME). Traditional tungsten substrate becomes brittle after diamond film deposition and is prone to fracture when BDDME confronts slight bending force in practice because of formation of carbide on the surface of tungsten. To improve the flexibility of the microelectrode, a 100 nm sputtered copper layer has been chosen as a barrier interlayer to hinder diffusion of carbon into tungsten, as copper does not form compounds with carbon and tungsten. We have found that the copper layer greatly curbs the formation of tungsten carbide, making the W/Cu substrates more flexible than W substrates after deposition and the bending angle was up to 40°, which was 4 times higher than that of bare tungsten substrates. Besides, the sputtered copper layer made it easier for diamond nanoparticles to adsorb on the surface, which has improved nucleation and growth of diamond film. High-quality and well-adhesive diamond film without crack and holes has been deposited on the W/Cu substrate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 258, 15 November 2014, Pages 797-803
Journal: Surface and Coatings Technology - Volume 258, 15 November 2014, Pages 797-803
نویسندگان
Hangyu Long, Jingqing Wang, Xiongwei Zhang, Hao Luo, Jiaqi Luo, Zejun Deng, Q.P.Wei Q.P.Wei, Z.M.Yu Z.M.Yu,