کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8027652 1517624 2014 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of TGO creep on top-coat cracking induced by cyclic displacement instability in a thermal barrier coating system
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Effect of TGO creep on top-coat cracking induced by cyclic displacement instability in a thermal barrier coating system
چکیده انگلیسی
The displacement instability of the thermally grown oxide (TGO) under thermal cycling is a fundamental source of cracking within the ceramic top-coat (TC) in a thermal barrier coating system. The effect of TGO creep on TC cracking induced by cyclic instability is numerically investigated in this work. Temperature-dependent elastic-plastic properties of each coating layer are considered in a finite element analysis. A power law is adopted to model the creep behavior of TGO and bond-coat (BC), and TGO growth at high temperature with the consideration of both lateral and through-thickness growth strains is simulated. The numerical results show that during thermal cycling TGO displacement instability occurs in the zone having a geometric imperfection and the accumulation of TGO displacements (downward at the center and upward around the periphery) is evident. The tensile stress (perpendicular to the TGO/TC interface) in TC mainly arises above the center of the instability zone and causes a mode I crack, whereas the shear stress is predominant around the periphery of the instability zone and causes a mode II crack. Both the tensile and shear stresses can be reduced by TGO creep which restrains the morphology distortion of the instability zone during thermal cycling. Furthermore, TGO creep can significantly decrease the energy release rate of TC cracking no matter whether the crack is located in the tensile-stress dominating zone or the shear-stress dominating zone.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 254, 15 September 2014, Pages 410-417
نویسندگان
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