کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8029723 1517648 2013 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Deposition and properties of silicon oxynitride films with low propagation losses by inductively coupled PECVD at 150 °C
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Deposition and properties of silicon oxynitride films with low propagation losses by inductively coupled PECVD at 150 °C
چکیده انگلیسی
Silicon oxynitride films were deposited at 150 °C using inductively coupled plasma enhanced chemical vapor deposition, aiming towards low-temperature fabrication of waveguide material with low optical losses in the visible and near-infrared range. The influence of the deposition parameters such as SiH4 fraction, deposition pressure and Ar/N2 ratio on the film properties was experimentally investigated using spectroscopic ellipsometry, X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. These findings were consistent with the chemical modeling of gas-phase composition of the plasma thereby leading to better understanding of the deposition process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 230, 15 September 2013, Pages 46-50
نویسندگان
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