کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8029874 | 1517650 | 2013 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A Pd-free activation method for electroless nickel deposition on copper
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this work, a Pd-free activation method for electroless nickel deposition on copper via an immersion nickel technique was developed. In the very solution we studied, high concentration of thiourea resulted in a negative shift of the steady potential of copper, making it possible to realize immersion nickel. The obtained immersion nickel layers were characterized by scanning electron microscopy, energy dispersive X-ray spectrometry and X-ray photoelectron spectroscopy, demonstrating a co-deposition of sulfur in the nickel layer. Importantly, the post-treatment in 1.0Â M NaH2PO2Â +Â 1.0Â M NaOH solution was able to eliminate the adsorbed thiourea and stimulate the catalytic activity of the immersion nickel layer for electroless nickel deposition. A combination of open circuit potential measurements and morphology studies indicated that an incubation step was required during the electroless nickel deposition on the immersion nickel layers after post-treatment. Although the catalytic activity of this Ni-activation method was slightly lower as compared to the conventional Pd-activation, both obtained electroless Ni-P layers exhibited similar morphology, chemical composition, corrosion resistance, and adhesion strength. Thus, this work demonstrated that the newly developed Ni-activation method was cost-effective and could be a promising replacement to expensive Pd-activation method currently used in printed circuit board industries.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 228, 15 August 2013, Pages 27-33
Journal: Surface and Coatings Technology - Volume 228, 15 August 2013, Pages 27-33
نویسندگان
Dong Tian, De Y. Li, Fang F. Wang, Ning Xiao, Rui Q. Liu, Ning Li, Qing Li, Wei Gao, Gang Wu,