Grain growth and mechanical properties of CeO2-x films deposited on Si(100) substrates by pulsed dc magnetron sputtering

► CeO2-x films were deposited onto Si substrates by pulsed magnetron sputtering. ► Rapid thermal annealing was performed to change the stoichiometry of CeO2-x films. ► The phase transition in CeO2-x films was due to the formation of oxygen vacancies. ► The hardness and elastic modulus were performed as a function of RTA temperature.