Effect of gas temperature on the structural and optoelectronic properties of a-Si:H thin films deposited by PECVD

► The Tg in PECVD was confirmed to be an important parameter. ► Tg limits the incorporation of hydrogen bonded in the shape of polyhydrides. ► The enhancements of conductivity of samples depend strongly on their structures. ► The grown thin films have been examined using multiple characterization techniques.