Wide variations of SiCxNy:H thin films optical constants deposited by H2/N2/Ar/hexamethyldisilazane microwave plasma

► SiCxNy:H thin films deposited by H2/N2/Ar/hexamethyldisilazane microwave plasma ► Modification of N2/H2 ratio leads to important variations of C and N film content. ► Refractive index (1.75 < n < 2.15) and band gap (3.5 eV < Eg < 5 eV) thin film can be tuned. ► Refractive index and band gap values are closely related to SiC bonding density.