کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8038241 | 1518331 | 2014 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Determining the thickness of atomically thin MoS2 and WS2 in the TEM
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
Multislice simulations were used to analyze the reliability of annular dark field scanning transmission electron microscopy (ADF-STEM) imaging and selected-area electron diffraction (SAED) for determining the thicknesses of MoS2 and WS2 specimens in the aberration-corrected TEM. Samples of 1 to 4 layers in thickness for both 2H and 1T polymorphs were studied and tilts up to 500Â mrad off of the [0001] zone axis were considered. All thicknesses including the monolayer showed distortions and intensity variations in their ADF-STEM images and SAED patterns as a result of tilt. Both techniques proved to be applicable to distinguish monolayers from multilayers using tilt. Without tilt, neither technique allows unambiguous thickness determination solely by comparing relative intensities of atomic columns in ADF-STEM images or diffraction patterns oriented along at [0001] zone axis, with the exception of monolayer 2H WS2. However, differentiation is possible using absolute intensities in ADF-STEM images. The analysis of ADF-STEM images and SAED patterns also allows identification of the 2H and 1T polymorphs of MoS2 and WS2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 147, December 2014, Pages 8-20
Journal: Ultramicroscopy - Volume 147, December 2014, Pages 8-20
نویسندگان
Ryan J. Wu, Michael L. Odlyzko, K. Andre Mkhoyan,